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• W1989732847 abstract "Silicon nanocrystals embedded in a silicon-rich silicon-oxide matrix have been fabricated at different silicon contents (38%, 40%, and 49%) using plasma-enhanced chemical vapor deposition and annealing at different temperatures in the range from 900 °C to 1100 °C. Their optical properties have been investigated by photoluminescence and transmittance measurements. Strong, room-temperature emission bands at ∼1.6 eV have been observed for all samples, with intensities dependent on the annealing temperature and Si content of the samples. From transmittance measurements, a redshift of the absorption edge has been detected when increasing the annealing temperature or Si content." @default.
• W1989732847 created "2016-06-24" @default.
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• W1989732847 date "2007-08-15" @default.
• W1989732847 modified "2023-09-23" @default.
• W1989732847 title "Influence of the annealing temperature and silicon concentration on the absorption and emission properties of Si nanocrystals" @default.
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• W1989732847 doi "https://doi.org/10.1063/1.2772501" @default.
• W1989732847 hasPublicationYear "2007" @default.
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