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- W1990031810 abstract "Abstract Single crystalline multilayered structures of Si/CoSi2/Si were made by high dose implantation of Co in a Si wafer which was subsequently annealed. These structures were then investigated with both Mossbauer spectroscopy and channeling measurements. The experiments show that a change occurs in the structure of the CoSi2 at a temperature between 150 and 220 K." @default.
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- W1990031810 date "1992-01-01" @default.
- W1990031810 modified "2023-09-30" @default.
- W1990031810 title "Mössbauer and channeling measurements on buried layers of CoSi2 in Si" @default.
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- W1990031810 doi "https://doi.org/10.1016/0168-583x(92)95183-r" @default.
- W1990031810 hasPublicationYear "1992" @default.
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