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- W1990040127 abstract "InAlN/GaN high electron mobility transistors (HEMTs) grown on SiC substrates were subjected to 5-15 MeV high energy protons with a fixed 5 × 1015 cm−2 fluence. The saturation currents and gate leakage currents of all the proton-irradiated InAlN/GaN HEMTs were degraded. Proton irradiation at lower energy was found to degrade the direct current (DC) current-voltage (I-V) characteristics more severely than higher-energy irradiation, because the energy loss component of the lower energy protons was larger than those of higher-energy protons in the vicinity of the 2-dimensional electron gas conducting channel. Our experimental results were consistent with stopping and range of ions in matter simulation results of the energy deposition profile by the protons." @default.
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- W1990040127 date "2012-01-02" @default.
- W1990040127 modified "2023-10-18" @default.
- W1990040127 title "Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies" @default.
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- W1990040127 doi "https://doi.org/10.1063/1.3673906" @default.
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