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• W1990190003 abstract "The novel β-hydride eliminating trialkyl-As compounds diethyl-tertiarybutyl-As (DEtBAs) and diethyl-isopropyl-As (DEiPrAs) has been used as less toxic substitutes for AsH3 for both thecleaning of oxide passivated GaAs wafers prior to growth and the subsequent metalorganic vapour phase epitaxy (MOVPE), layer deposition of GaAs, AlAs and (AlGa)As. High-resolution X-ray diffraction and scanning electron microscopy have been used to investigate the structural properties of GaAs/AlAs superlattices that were grown directly onto differently pretreated GaAs wafer surfaces without buffer using different As precursors in combination with TMGa, TEGa and TMAl. Nucleation problems due to the formation of a contamination layer onto the wafer surface after the pretreatment as well as binary growth rates and incorporation efficiencies of Al and Ga into (AlGa)As have been studied. An optimized preparation sequence with respect to annealing times and temperatures using the trialkyl-As sources is presented. This pretreatment procedure ensures ideal nucleation of the GaAs/AlAs superlattice structures. For the use of the novel β-eliminating As compounds instead of AsH3, no changes of the growth rate dependence for the binary GaAs and AlAs layers and an identical incorporation behaviour in ternary (AlGa)As have been observed in the mass transport limited growth regime." @default.
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• W1990190003 date "1994-12-01" @default.
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• W1990190003 title "GaAs substrate pretreatment and metalorganic vapour phase epitaxy of GaAs, AlAs and (AlGa) As using β-eliminating trialkyl-As precursors" @default.
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• W1990190003 doi "https://doi.org/10.1016/0022-0248(94)91100-2" @default.
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