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• W1990200219 abstract "A thin, flexible monocrystalline germanium (c-Ge) heterojunction solar cell has been developed based on a novel kerfless exfoliation process and remote plasma-enhanced chemical vapor deposition (RPCVD) of hydrogenated amorphous silicon (a-Si:H). The performance of the exfoliated 50 μm thick and bulk 500 μm Ge heterojunction cells is compared in this paper. A superior conversion efficiency of 5.28% was achieved with the 50 μm exfoliated Ge cell versus 1.78% for the bulk Ge cell, in agreement with simulation results. A record fill factor of 58.1% for an a-Si:H/c-Ge heterojunction cell was obtained with the exfoliated cell. Moreover, the conversion efficiency achieved with the 50 μm exfoliated cell (without intrinsic a-Si:H passivation) is comparable to the best reported in literature with bulk Ge heterojunction cells and intrinsic a-S:H passivation." @default.
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• W1990200219 date "2013-04-01" @default.
• W1990200219 modified "2023-09-26" @default.
• W1990200219 title "Exfoliated, thin, flexible germanium heterojunction solar cell with record FF=58.1%" @default.
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• W1990200219 doi "https://doi.org/10.1016/j.solmat.2013.01.002" @default.
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