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- W1990204270 abstract "With a low-energy electron stimulated reaction on Si oxide nanofabrication of thin Si-oxide layers on Si surfaces has been carried out using scanning tunneling microscope (STM). By dosing a very localized low-energy electron beam from the STM tip followed by thermal desorption, nanometer-scale windows of 50 nm on average can be cut through the Si oxide layers with a minimum size of ∼25 nm. With this method, line- and ring-window patterns were successfully formed on the Si oxide layer. E-beam exposure dependence of the window size was observed on the fabricated line windows, which indicates high controllability of the nanofabrication procedure." @default.
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- W1990204270 date "1999-03-01" @default.
- W1990204270 modified "2023-10-16" @default.
- W1990204270 title "Low Energy Electron Stimulated Etching of Thin Si-Oxide Layer in Nanometer Scale Using Scanning Tunneling Microscope" @default.
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- W1990204270 doi "https://doi.org/10.1143/jjap.38.l252" @default.
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