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• W1990246720 abstract "The heterojunction between amorphous silicon (sub)oxides (a-SiOx:H, 0 &lt; x &lt; 2) and crystalline silicon (c-Si) is investigated. We combine chemical vapor deposition with in-system photoelectron spectroscopy in order to determine the valence band offset ΔEV and the interface defect density, being technologically important junction parameters. ΔEV increases from ≈0.3 eV for the a-Si:H/c-Si interface to &gt;4 eV for the a-SiO2/c-Si interface, while the electronic quality of the heterointerface deteriorates. High-bandgap a-SiOx:H is therefore unsuitable for the hole contact in heterojunction solar cells, due to electronic transport hindrance resulting from the large ΔEV. Our method is readily applicable to other heterojunctions." @default.
• W1990246720 created "2016-06-24" @default.
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• W1990246720 date "2015-01-19" @default.
• W1990246720 modified "2023-10-06" @default.
• W1990246720 title "Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiOx:H, 0 &lt; <b>x</b> &lt; 2)" @default.
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• W1990246720 doi "https://doi.org/10.1063/1.4906195" @default.
• W1990246720 hasPublicationYear "2015" @default.
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