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• W1990284435 abstract "Cyclotron and intersubband resonances in HgTe quantum wells in the inverted band regime are studied by Fourier-transform spectroscopy. Metal-oxide-semiconductor field-effect transistors (MOSFETs) allow us to tune the electron density. In particular, we investigate filling factor dependent splittings of the cyclotron resonance in strong magnetic fields and a crossing of Landau levels of the conduction and valence subband. The experimental results are well described by a 6 × 6 k·p-model." @default.
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• W1990284435 date "1998-02-01" @default.
• W1990284435 modified "2023-09-27" @default.
• W1990284435 title "Density dependent cyclotron and intersubband resonance in inverted CdTe/HgTe/CdTe quantum wells" @default.
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• W1990284435 doi "https://doi.org/10.1016/s0022-0248(98)80247-9" @default.
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