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- W1990379712 abstract "Summary form only given. The paper will focus on the double gate devices and gate-all-round devices, as well as the related impact on RF/analog scaling. Three kinds of double gate devices with different gate positions and different junction profiles will be generally estimated, including one extension of FINFET, named as BOI FINFETs which can combine the advantages of both SOI FinFETs and bulk FinFETs. Design guidelines of double gate devices for RF/analog applications will be discussed, considering the influence of the parasitic resistance and capacitance. Gate-all-around top-down silicon nanowire transistors (SNWTs) is another focus as one promising ultimate candidate for the end of the roadmap and has attracted many attentions recently. The paper will discuss the device fabrication with compatible process integration." @default.
- W1990379712 created "2016-06-24" @default.
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- W1990379712 date "2008-05-01" @default.
- W1990379712 modified "2023-09-23" @default.
- W1990379712 title "New device architectures for nano-CMOS technology “walking” to end of the roadmap and the impact on RF/analog applications" @default.
- W1990379712 doi "https://doi.org/10.1109/iwjt.2008.4540006" @default.
- W1990379712 hasPublicationYear "2008" @default.
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