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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1990391200> ?p ?o ?g. }

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• W1990391200 abstract "We proposed and demonstrated an Al gettering process for high-quality InGaAsN quantum wells grown by metalorganic chemical vapor deposition. Ammonia flow prior to InGaAsN growth eliminates undesirable Al incorporation in the InGaAsN continuously grown on GaAs/AlGaAs layers. The InGaAsN quantum well without Al contamination showed a smooth surface and strong photoluminescence intensity. An InGaAsN vertical cavity surface-emitting laser structure grown in a single-step process using the Al gettering process showed continuous-wave operations with 2.7 mW of 1279 nm emission at room temperature." @default.
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• W1990391200 date "2004-07-23" @default.
• W1990391200 modified "2023-09-26" @default.
• W1990391200 title "Al Gettering for InGaAsN in Metalorganic Chemical Vapor Deposition" @default.
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• W1990391200 doi "https://doi.org/10.1143/jjap.43.l1085" @default.
• W1990391200 hasPublicationYear "2004" @default.
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