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- W1990400771 abstract "The release of atomic H during charge injection into SiO2 layers thermally grown on silicon was monitored by measuring the H-induced decrease in the concentration of active boron acceptors at the Si surface. It is found that H is set free both upon trapping of holes in the oxide and upon their neutralization by electron injection. The H+ release upon hole trapping correlates with the generation of paramagnetic E′ centers in the oxide (O3≡Si defects) unveiling the hole trapping on Si–H bonds as the primary H liberation mechanism in SiO2. The additional H liberation upon neutralization of the positive charge created by hole injection suggests that a large portion of this charge is due to protons trapped in the oxide, which, upon electron trapping, are released as atomic H." @default.
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- W1990400771 date "2001-02-01" @default.
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- W1990400771 title "Hydrogen release related to hole injection into SiO2 layers on Si" @default.
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- W1990400771 doi "https://doi.org/10.1016/s1369-8001(00)00151-7" @default.
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