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• W1990408334 abstract "We have investigated the photoluminescence of microcrystalline silicon formed in SiO2 layers by ion beam synthesis. 28Si+ ions over the dose range 1 × 1017 to 6 × 1017 cm−2 at energies of 150 keV and 200 keV were implanted into thermal oxide. Samples were annealed in a halogen lamp furnace at temperatures of 900°C, 1100°C and 1300°C for times between 15 and 120 min. The implanted layers were analysed by Rutherford Backscattering Spectroscopy (RBS), Cross-Sectional Transmission Electron Microscope (XTEM) and Photoluminescence (PL) (80 K to 300 K) using an Ar laser of 488 nm wavelength. Room temperature (300 K) visible photoluminescence has been observed from all the samples. XTEM confirms the existence of Si microcrystals (within the SiO2 layers), which typically have a diameter within the range of 2–15 nm. The luminescence peak wavelength was about 600 nm or 800 nm, depending upon processing. Changes in the peak wavelength and intensity from these samples and other samples in which the crystallites were reduced in size by thermal oxidation, show trends which are generally consistent with quantum confinement, however, other mechanisms cannot be ruled out." @default.
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• W1990408334 date "1995-03-01" @default.
• W1990408334 modified "2023-10-01" @default.
• W1990408334 title "Visible photoluminescence at room temperature from microcrystalline silicon precipitates in SiO2 formed by ion implantation" @default.
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• W1990408334 doi "https://doi.org/10.1016/0168-583x(94)00525-7" @default.
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