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• W1990423066 abstract "A series of ${mathrm{In}}_{mathit{x}}$${mathrm{Ga}}_{1mathrm{ensuremath{-}}mathit{x}}$As/GaAs layers with x ranging from 0.36 to 1 was grown by molecular-beam epitaxy, in order to examine the dependence of the critical layer thickness (CLT) on the In mole-fraction and growth temperature. Reflection high-energy electron diffraction (RHEED) and photoluminescence (PL) measurements were used and indicated a reduced CLT with increasing substrate temperature. A large difference in CLT was found between layers examined by RHEED and PL. This is discussed and explained to be a consequence of the difference in layer structure between layers examined by PL and by RHEED. While RHEED is a surface sensitive method, the luminescence in PL experiments originates from embedded layers. In PL measurements the thickness of the onset of three-dimensional growth, ${mathit{t}}_{3_{mathrm{D}}}$, decreased from 55 to 15 AA{} for ${mathrm{In}}_{0.36}$${mathrm{Ga}}_{0.64}$As layers as the growth temperature increased from 470 to 570 ifmmode^circelsetextdegreefi{}C. The PL study also indicated a reduced temperature dependence with increasing In content. The RHEED measurements for ${mathrm{In}}_{0.36}$${mathrm{Ga}}_{0.64}$As showed that the thickness when the surface lattice parameter becomes equal to that of the alloys varied from 95 to 10 AA{} for growth temperatures between 490 and 590 ifmmode^circelsetextdegreefi{}C, respectively. Calculations by the most frequently used models for estimating the CLT were also carried out. The model of Price [Phys. Rev. Lett. 66, 469 (1991)] best fits our experimental results. The carrier mobility in 2-ensuremath{mu}m-thick InAs layers was measured between 20 and 300 K for layers grown at substrate temperatures between 390 and 525 ifmmode^circelsetextdegreefi{}C. The results indicate a peak mobility of 17 266 ${mathrm{cm}}^{2}$/V s at 300 K for a structure grown at 520 ifmmode^circelsetextdegreefi{}C and a peak mobility at 77 K of 34 000 ${mathrm{cm}}^{2}$/V s for a sample grown at 510 ifmmode^circelsetextdegreefi{}C." @default.
• W1990423066 created "2016-06-24" @default.
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• W1990423066 date "1993-08-15" @default.
• W1990423066 modified "2023-09-26" @default.
• W1990423066 title "Temperature-dependent relaxation and growth phenomena in strained<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>In</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant=italic>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><…" @default.
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• W1990423066 doi "https://doi.org/10.1103/physrevb.48.5289" @default.
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