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• W1990460967 abstract "Epitaxial ZnO thin films were grown by pulsed laser deposition (PLD) in N2 or N2O or O2 background gas on MgO-buffered a-plane sapphire. The excitonic room-temperature cathodoluminescence (CL) intensity, the carrier concentration and the Hall mobility showed well-defined maxima for films grown at PLD gas pressures of ca. 1 mbar N2, N2O, and O2. However, despite the comparable high CL intensities of the ZnO films grown in the three different background gases, their surface roughness varied considerably. Films with rough surface showed a broadening and splitting of the room-temperature CL peak into maxima at 3.21 and 3.26 eV, which could be due to either grain morphology or spatial variation of the electronic defect structure." @default.
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• W1990460967 date "2005-08-01" @default.
• W1990460967 modified "2023-10-01" @default.
• W1990460967 title "Room-temperature cathodoluminescence of n-type ZnO thin films grown by pulsed laser deposition in N2, N2O, and O2 background gas" @default.
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• W1990460967 doi "https://doi.org/10.1016/j.tsf.2004.11.215" @default.
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