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• W1990472569 abstract "We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopy study shows that ALD Al2O3 is uniformly grown on this layer-structured channel material. Electrical characterization reveals that the right selection of ALD precursors and the related surface chemistry play a critical role in device performance of Bi2Te3 based TI FETs. We realize both top-gate and bottom-gate control on these devices, and the highest modulation rate of 76.1% is achieved by using simultaneous dual gate control." @default.
• W1990472569 created "2016-06-24" @default.
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• W1990472569 date "2011-08-01" @default.
• W1990472569 modified "2023-09-22" @default.
• W1990472569 title "Atomic-layer-deposited Al₂O₃on Bi₂Te₃for topological insulator field-effect transistors" @default.
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• W1990472569 doi "https://doi.org/10.1063/1.3622306" @default.
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