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- W1990503287 abstract "In this letter, we investigate the structural properties and electrical characteristics of the Al–SiO2–Y2O3–SiO2–poly-Si (AOYOP) thin-film transistor (TFT) nonvolatile memory device. The composition of Y2O3 charge-trapping layer was analyzed using X-ray photoelectron spectroscopy. The Y2O3 AOYOP TFT memory device exhibited a large memory window of 2.5 V, a long charge retention time of ten years with a minimal charge loss of ∼15%, and a better endurance performance for P/E cycles up to 105. © 2013 The Electrochemical Society. [DOI: 10.1149/2.002310ssl] All rights reserved." @default.
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- W1990503287 date "2013-07-13" @default.
- W1990503287 modified "2023-10-17" @default.
- W1990503287 title "Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer" @default.
- W1990503287 doi "https://doi.org/10.1149/2.002310ssl" @default.
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