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- W1990506886 abstract "This paper reports the first demonstration of the lifetime control of the minority carrier in 4H-SiC PiN diodes by He+ ion implantation. In this work, we fabricated 4H-SiC PiN diodes with the epitaxial junction and the blocking voltage of 2.6kV, precisely corresponding to the theoretical blocking voltage calculated from the doping concentration (4.0x1015/cm2) and the thickness of the drift layer (16.5 µm). He+ ion implantation was performed with the energy and the dose of 400kV and 1.0x1013-2.0x1014/cm2, respectively. We observed no different characteristics in the blocking voltage (2.6kV) and leakage current (<10µA@2.5kV) between the PiN diodes with/without He+ ion implantation. However, we confirmed the improvement of the current recovery characteristics in the diodes with He+ ion implantation." @default.
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- W1990506886 date "2005-05-01" @default.
- W1990506886 modified "2023-10-16" @default.
- W1990506886 title "Lifetime Control of the Minority Carrier in PiN Diodes by He<sup>+</sup> Ion Implantation" @default.
- W1990506886 doi "https://doi.org/10.4028/www.scientific.net/msf.483-485.985" @default.
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