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- W1990623933 abstract "The composition, structural, electrical, and optical properties of as-grown and heat treated tin-mono-sulfide (SnS) ultra-thin films have been studied. The ultra-thin SnS films were prepared on glass substrates by thermal resistive evaporation technique. All the SnS films contained nanocrystallites and exhibited p-type conductivity with a low Hall-mobility, < 50 cm2/Vs. All these films are highly tin rich in nature and exhibited orthorhombic crystal structure. As compared to other films, the SnS films annealed at 300 °C showed a low electrical resistivity of ~ 36 Ωcm with an optical band gap of ~ 1.98 eV. The observed electrical and optical properties of all the films are discussed based on their composition and structural parameters. These nanocrystalline ultra-thin SnS films could be expected as a buffer layer for the development of tandem solar cell devices due to their low-resistivity and high absorbability with an optimum band gap." @default.
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- W1990623933 date "2011-10-01" @default.
- W1990623933 modified "2023-10-07" @default.
- W1990623933 title "Structural, electrical, and optical properties of as-grown and heat treated ultra-thin SnS films" @default.
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- W1990623933 doi "https://doi.org/10.1016/j.tsf.2011.07.074" @default.
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