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- W1990646934 abstract "The kinetics of structure formation during Si deposition on GaAs(001) and the underlying atomic configurations have been studied in real-time simultaneously by reflectance difference spectroscopy (RDS) and reflection high-energy electron diffraction (RHEED). Using a difference function approach, Si dimers and As dimers on Si are directly detected in addition to As and Ga dimers. A number of differently terminated (3×2) structures of the missing atom row type, that cannot distinguished by RHEED alone, are identified. RDS transients recorded at photon energies characteristic for different dimers reveal the evolution of ordered structures at well-defined coverages that clearly depend on the structure of the initial GaAs(001) surface." @default.
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- W1990646934 date "1998-05-01" @default.
- W1990646934 modified "2023-09-28" @default.
- W1990646934 title "Real-time analysis of Si monolayer formation on GaAs(001) during MBE" @default.
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- W1990646934 doi "https://doi.org/10.1016/s0039-6028(97)00967-9" @default.
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