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• W1990657558 abstract "We studied the effect of plasma treatments on the electrical property of Ti / Al ohmic contacts to N-face n-type GaN. The surface of N-face, n-type GaN has been treated with plasma for 120 s before the deposition of bilayered electrodes, Ti (50 nm) / Al (35 nm), and its contact resistance was compared with that of the reference sample without plasma. As a result, we found that the ohmic contact was reduced from to by applying plasma on the surface of n-type GaN, which was attributed to the reduction in the Schottky barrier height (SBH), caused by nitrogen vacancies formed during the plasma process." @default.
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• W1990657558 date "2010-01-30" @default.
• W1990657558 modified "2023-09-26" @default.
• W1990657558 title "Study of Oxygen Plasma Effects to Reduce the Contact Resistance of n-type GaN with Nitrogen Polarity" @default.
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• W1990657558 doi "https://doi.org/10.5757/jkvs.2010.19.1.010" @default.
• W1990657558 hasPublicationYear "2010" @default.
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