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- W1990762402 abstract "An optical investigation of Si samples implanted with high fluences of As, and laser or thermally annealed is reported. In particular, the effect of very high doping on structure in reflectivity data due to interband transitions, on the effective mass and scattering time of the free carriers is shown and briefly analyzed." @default.
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- W1990762402 date "1987-01-01" @default.
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- W1990762402 title "Optical study of high dose implanted, laser annealed silicon" @default.
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- W1990762402 doi "https://doi.org/10.1016/s0168-583x(87)80116-7" @default.
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