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• W1990807725 abstract "Gallium oxide (Ga2O3) thin films have been prepared on MgO (110) substrates at different temperatures by metal–organic chemical vapor deposition. The structural and optical properties of the Ga2O3 films were investigated in detail. The obtained Ga2O3 film grown at 650 °C showed the best crystallinity with a monoclinic structure. Microstructure analysis revealed a clear epitaxial relationship of β-Ga2O3 (1¯02)‖MgO (110) with Ga2O3 [010]‖MgO [001] and a schematic diagram was proposed to clarify the growth mechanism of the two-fold rotation domain structure. The average transmittance of the films in the visible wavelength range exceeded 90%." @default.
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• W1990807725 date "2012-09-01" @default.
• W1990807725 modified "2023-09-25" @default.
• W1990807725 title "Epitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal–organic chemical vapor deposition" @default.
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• W1990807725 doi "https://doi.org/10.1016/j.jcrysgro.2012.06.022" @default.
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