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- W1990925101 abstract "MOVPE growth is used to prepare high-quality v-groove quantum wires in the AlGaAs/GaAs system. The particular aim of this work is to find suitable precursor combinations and growth conditions with which quantum wire structures can be achieved, where only the lowest subband is occupied and on which truly one-dimensional transport can be studied. Different precursor combinations of triethylgallium (TEGa), trimethylgallium (TMGa), trimethylaluminium (TMAl) and dimethylethylaminenalane (DMEAAl) were employed for growth of the Al0.30Ga0.70As barrier layer. Calculations of the 2D-Schrödinger-equation show, that suitable quantum wire geometries are obtained when using combinations with TMGa. High-quality material is achieved at 575°C for TMGa/DMEAAl and 595°C for TMGa/TMAl. In general, lower growth temperatures lead to the preferential lower radii of curvature for a given precursor combination. A comparison of the best two combinations shows that TMGa/TMAl is best suited for growth of the Al0.30Ga0.70As barrier layer with respect to the intended application." @default.
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- W1990925101 date "2000-12-01" @default.
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- W1990925101 title "On the choice of precursors for the MOVPE-growth of high-quality Al0.30Ga0.70As/GaAs v-groove quantum wires with large subband spacing" @default.
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- W1990925101 doi "https://doi.org/10.1016/s0022-0248(00)00655-2" @default.
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