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- W1990945944 abstract "We developed a new liquid phase epitaxy (LPE) growth method for growing large GaN single crystals. In this method, the homo-epitaxial growth of the GaN crystal proceeds by nitrogen dissolution against a Na-Ga solution film coating the GaN thin-film substrate. A growth rate of 4 µm/h was achieved though nitrogen pressure was relatively low at 9.5 atm. Furthermore, the GaN film grown by this method showed a flat surface." @default.
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- W1990945944 date "2003-08-01" @default.
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- W1990945944 title "Novel Liquid Phase Epitaxy (LPE) Growth Method for Growing Large GaN Single Crystals: Introduction of the Flux Film Coated-Liquid Phase Epitaxy (FFC-LPE) Method" @default.
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- W1990945944 doi "https://doi.org/10.1143/jjap.42.l879" @default.
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