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- W1990973788 abstract "The deposition of ZnO films by reactive sputtering has been investigated in order to study the dependence of the film properties on the main deposition parameters (RF power, substrate temperature, 82 content in discharge gas). The orientation and morphology of the crystalline grains have been studied by means of X-ray diffraction measurements. Films deposited on microscope slides generally present crystalline grains well oriented with the c-axis perpendicular to the substrate surface. Measurements of electrical resistivity show that the presence of oxygen in the discharge gas gives rise to films with resistivity ranging from 103 to 108 ohm cm. The correlation between structural and electrical properties of the ZnO films and the deposition parameters is discussed." @default.
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- W1990973788 date "1983-09-01" @default.
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- W1990973788 title "Deposition of ZnO films by rf sputtering" @default.
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- W1990973788 doi "https://doi.org/10.1016/0254-0584(82)90019-0" @default.
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