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- W1990983302 endingPage "4749" @default.
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- W1990983302 abstract "CuInS2 absorber thin films were prepared by spray pyrolysis deposition at different substrate temperatures (250 °C, 300 °C and 350 °C) using an aqueous solution of CuCl2, InCl3 and SC(NH2)2 at a precursor molar ratio of Cu:In:S=1:1.25:4.5. The effect of the substrate׳s temperature on the structural, morphological, optical and electrical properties of CuInS2 thin films was investigated. The X-ray diffraction patterns showed that CuInS2 has a tetragonal structure. The results show that the films deposited at 300 °C have improved electrical conduction and photocurrent values. When increasing the substrate׳s temperature the absorbance decreases while the band gap energy increases, as a combined effect of crystallinity, morphology and deviation from stoichiometry." @default.
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- W1990983302 date "2015-04-01" @default.
- W1990983302 modified "2023-10-16" @default.
- W1990983302 title "Effects of the growth temperature on the properties of spray deposited CuInS2 thin films for photovoltaic applications" @default.
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- W1990983302 doi "https://doi.org/10.1016/j.ceramint.2014.12.023" @default.
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