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- W1991006809 abstract "Abstract At the interface of GaAs/n-AlxGa1−xAs heterostructures charge carriers are transferred from the donors in AlxGa1−xAs into the conduction band of GaAs where they form a quasi-two-dimensional electron layer. The carrier confinement at the interface is demonstrated by Shubnikov-De Haas measurements. Resonant inelastic light scattering from the two-dimensional electron gas is a direct measure of the subband splitting in the space charge layer. The results are compared with recent self-consistent calculations." @default.
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- W1991006809 date "1980-08-01" @default.
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- W1991006809 title "Electronic properties of the two-dimensional system at GaAs/AlxGa1−xAs interfaces" @default.
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- W1991006809 doi "https://doi.org/10.1016/0167-2584(80)90612-x" @default.
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