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• W1991023898 abstract "Randomness and discreteness for appearance of pop-out of the single crystal silicon with a (100) orientation were studied by a self-made indentation device. For a given maximum penetration load, the load Ppo for appearance of pop-out fluctuates in a relatively large range, which makes it hard to study the effect of the loading/unloading rate on the load Ppo. Experimental results with different maximum penetration loads indicate that the critical penetration load for appearance of pop-out is in the range of 15 mN~20 mN for the current used single crystal silicon. For a given maximum penetration load, the load Ppo for appearance of pop-out seems random and discrete, but in the point of statistics, it has an obviously increasing trend with increase of the maximum penetration load and also the fraction Ppo/Pmax approximately keeps in the range of 0.2~0.5 for different maximum penetration loads changing from 15 mN to 150 mN." @default.
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• W1991023898 date "2013-04-12" @default.
• W1991023898 modified "2023-09-28" @default.
• W1991023898 title "Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon" @default.
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• W1991023898 doi "https://doi.org/10.3390/ma6041496" @default.
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