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• W1991282018 abstract "To enhance sensing characteristics of semiconductor gas sensors, the surface morphology of sensing layer modified by laser irradiation was performed. Tungsten oxide (WO3) thin-films grown on Si/SiO2 wafers by radio-frequency sputtering were annealed and then irradiated by an excimer laser under various laser power densities. The effect of the laser irradiation on film surface morphology was studied by X-ray diffraction and atomic force microscopy. Gas sensors based on the laser-irradiated WO3 films demonstrated better responses to low concentration NO2 compared with the sensors without laser irradiation." @default.
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• W1991282018 date "2012-04-01" @default.
• W1991282018 modified "2023-09-27" @default.
• W1991282018 title "Improvement of sensing characteristics of radio-frequency sputtered tungsten oxide films through surface modification by laser irradiation" @default.
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• W1991282018 doi "https://doi.org/10.1016/j.matchemphys.2012.01.116" @default.
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