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• W1991367629 abstract "We have analysed bismuth incorporation into GaN layers using plasma-assisted molecular beam epitaxy (PA-MBE) at extremely low growth temperatures of less than ∼100 °C under both Ga-rich and N-rich growth conditions. The formation of amorphous GaN1−xBix alloys is promoted by growth under Ga-rich conditions. The amorphous matrix has a short-range order resembling random crystalline GaN1−xBix alloys. We have observed the formation of small crystalline clusters embedded into amorphous GaN1−xBix alloys. Despite the fact that the films are pseudo-amorphous we observe a well defined optical absorption edges that rapidly shift to very low energy of ∼1 eV." @default.
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• W1991367629 date "2012-01-20" @default.
• W1991367629 modified "2023-10-15" @default.
• W1991367629 title "Molecular beam epitaxy of GaN1-x Bi x alloys with high bismuth content" @default.
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• W1991367629 doi "https://doi.org/10.1002/pssa.201100312" @default.
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