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- W1991378590 abstract "Thin films of Si3N4 have been prepared by chemical vapor deposition (CVD) onto n+-Si substrates at 875 °C using an ammonia/silane ratio of 200 : 1. In the thickness range 93⩽τ⩽1021 Å, ellipsometric measurements have revealed that the refractive index decreases with film thickness, indicating a graded composition of silicon oxynitride with increasing oxygen content as the Si-Si3N4 interface is approached. Measurements of steady-state dark currents, injected into Si3N4 from negatively biased Al contacts at a constant average field Eav=Vτ−1=6 MV/cm, have been fitted to an empirical relation J=J0 exp(τ0/τ), where τ is the film thickness and τ0=1039 Å. The apparent increase in film conductivity with decreasing thickness τ is attributed to diminished electron trapping as τ approaches the centroid of trapped charge δ∼100 Å. Below approximately 200 Å, CVD Si3N4 films cannot sustain the continuous average field of 6 MV/cm needed for efficient Fowler-Nordheim injection from an Al contact. Thus, the maximum dissipative energy density of CVD Si3N4 has been estimated to be of the order of 10 kW/cm3. Measurements as a function of temperature in the range 276⩽T⩽470 °K indicate that the traps participating in electric field modification of Fowler-Nordheim injection lie in a narrow range 0.16⩽φT⩽0.18 eV below the conduction band of Si3N4." @default.
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- W1991378590 date "1980-01-01" @default.
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- W1991378590 title "High-field dark currents in thin CVD silicon nitride" @default.
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- W1991378590 doi "https://doi.org/10.1063/1.327350" @default.
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