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- W1991433729 abstract "Contactless topographic resistivity mapping is used to characterize SiC and Cd(Zn)Te wafer material. For locally inhomogeneous material, detailed analysis of the deformed charge transients allows the evaluation of the partial resistivity contributions." @default.
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- W1991433729 date "2008-09-01" @default.
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- W1991433729 title "Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te" @default.
- W1991433729 doi "https://doi.org/10.4028/www.scientific.net/msf.600-603.557" @default.
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