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- W1991453929 abstract "GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si substrates with specially designed composite intermediate layers consisting of a ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. The structural and optical properties of these new grown material were studied. X-ray diffraction, Raman scattering and Fourier transform IR reflectance measurement confirmed their wurtzite structure. Scanning electron microscopy exhibited the single crystalline grain size up to approximately 2 micrometers . Photoluminescence showed strong GaN near edge emission, with only very weak deep defect-related emissions, for GaN films, and strong MQW emissions. The film surface morphology and material properties are improved by adjusting the growth conditions and buffer layer structural design." @default.
- W1991453929 created "2016-06-24" @default.
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- W1991453929 date "1999-11-09" @default.
- W1991453929 modified "2023-10-06" @default.
- W1991453929 title "Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition" @default.
- W1991453929 doi "https://doi.org/10.1117/12.369404" @default.
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