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• W1991475622 abstract "Amorphous carbon nitride (a-C : N) and amorphous carbon (a-C) thin films that rarely contained hydrogen were synthesized on Si(1 0 0) wafers by means of shielded arc ion plating. Nanomechanical properties of these films were studied in relation to substrate bias voltage. The a-C film prepared at a DC bias voltage of 100 V showed a maximal hardness of 35 GPa, whereas the film deposited at −500 V had a minimal hardness of 7 GPa. Wear resistance was excellent for films with hardness greater than 20 GPa when rubbed with a diamond tip at a contact force of 20 μN. Hardness of the a-C : N films, remained in the range of 10–14 GPa, independent of the bias voltage. However, the wear resistance of the a-C : N films was much better than that of the hard a-C films. In particular, the a-C : N film prepared at −300 V was so wear resistant that the film did not wear at all." @default.
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• W1991475622 date "2000-11-01" @default.
• W1991475622 modified "2023-10-16" @default.
• W1991475622 title "Tribological properties of a-C : N and a-C films prepared by shielded arc ion plating" @default.
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• W1991475622 doi "https://doi.org/10.1016/s0042-207x(00)00317-1" @default.
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