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- W1991478546 abstract "Abstract The electrical properties of approximately 400 nm thick polycrystalline SnOx films are reported. The Hall effect measurements at high temperatures show that the films freshly annealed at 440 °C in air for 2h exhibit grain-boundary-limited mobility behaviour. In this regime, the films display low sensitivity to gases. During the film aging (conductance drift) the electron conductance mechanism changes from thermally activated mobility to a thermally activated carrier concentration regime. In the case of the high carrier depletion regime, the films exhibit better sensitivity and fast response to gases. The grain boundary carrier-trapping model has been used to explain our results." @default.
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- W1991478546 date "1990-12-01" @default.
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- W1991478546 title "Hall effect measurements in SnOx film sensors exposed to reducing and oxidizing gases" @default.
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- W1991478546 doi "https://doi.org/10.1016/0040-6090(90)90247-b" @default.
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