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- W1991489478 abstract "Thermal behavior of 200-mm- and 300-mm-diameter Si (100) wafers during high-temperature rapid thermal processing (RTP) in a single wafer furnace (SWF) is investigated as a function of temperature, pressure, process time, wafer handling method and speed. Significant elastic wafer shape deformation was observed during wafer temperature ramp-up. Slip generation was frequently observed in wafers processed above 1050°C. Size, shape and spatial distribution of crystal defects generated during RTP were characterized using an optical microscope and X-ray topography. The wafer handling method and speed are found to be very important in reducing defect generation during RTP at the given process conditions. Highly reproducible, slip-free RTP results were achieved in 200-mm- and 300-mm-diameter Si (100) wafers processed at 1100°C by optimizing the wafer handling method and speed." @default.
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- W1991489478 date "2002-07-15" @default.
- W1991489478 modified "2023-09-26" @default.
- W1991489478 title "Thermal Behavior of Large-Diameter Silicon Wafers during High-Temperature Rapid Thermal Processing in Single Wafer Furnace" @default.
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- W1991489478 doi "https://doi.org/10.1143/jjap.41.4442" @default.
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