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- W1991540574 abstract "ABSTRACT The use of Polystyrene Spheres (PSs) to realize nano-roughened Indium-Zinc Oxide (IZO) surface and a high reflective ohmic p-contact to improve the optoelectronic propertie s of larger-area (1u 1 mm 2 ) vertical metallic-substrate GaN-based light-emitting diodes (VLEDs) were proposed and investigated. A metal system consisting of annealed-Pt/Al/Pt was employed to serve as a reflector and ohmic contact to p-GaN, which exhibits a good ohmic contact (1.84×10 -3 2cm )and high reflectivity (88% at 465 nm). After the re moval of sapphire using la ser lift-off process (LLO) and etching of u-GaN by ICP, Ti/IZO film was then depos ited to serve as a transparent conduction layer (TCL). After that, the polystyrene spheres (PSs) were dispersed on the IZO surface, followed by second sputtering-deposition of IZO film to fill the space between neighboring PSs. The PSs were then removed to form a nano-roughened IZO top-layer. Compared to regular VLEDs with Ni/Au ohmic contact and T i/Al/Ti/Au as reflector layer, the fabricated VLED shows a typical increase in light output power (i.e., ' Lop/Lop) by 72.2% at 350 mA and a decrease in forward voltage (Vf) from 3.43 V down to 3.33 V. It is expected that the proposed PSs nano-roughening technology and high reflection annealed-Pt/Al/Pt metal system for ohmic contact to p-GaN would be a potential candidate for the fabrication of high power GaN-based LEDs for solid-state lighting in the near future. Keywords : Nano-roughened; Indium-zinc oxide; Laser lift- off; GaN LEDs; TCL; Oh mic contact; reflective" @default.
- W1991540574 created "2016-06-24" @default.
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- W1991540574 date "2010-02-11" @default.
- W1991540574 modified "2023-09-23" @default.
- W1991540574 title "Enhanced performance of vertical GaN-based LEDs with a highly reflective ohmic contact and a nano-roughened indium-zinc oxide transparent conduction layer" @default.
- W1991540574 doi "https://doi.org/10.1117/12.840170" @default.
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