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- W1991561330 abstract "AlxGa1−xAs 0.2<x<0.4 epilayers were grown by metalorganic vapor phase epitaxy in the temperature range of 850–950 °C. It has been experimentally shown that epitaxial growth at high temperatures enhances the free-carrier concentration and causes unusual behavior of deep centers for Sn-doped AlxGa1−xAs. From the temperature dependence of the Hall carrier density, and assuming multivalley conduction, an activation energy of the donor of 10 meV was deduced. Furthermore, these samples did not exhibit persistent photoconductivity. Besides, when all parameters of the epitaxy were kept constant, the aluminum fraction in the epitaxial layers slightly increases as the growth temperature increases." @default.
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- W1991561330 date "1989-03-20" @default.
- W1991561330 modified "2023-09-24" @default.
- W1991561330 title "Enhancement of free-carrier concentration in <i>n</i>-type Al<i>x</i>Ga1−<i>x</i>As grown by metalorganic vapor phase epitaxy in the temperature range 850–950 °C" @default.
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- W1991561330 doi "https://doi.org/10.1063/1.100775" @default.
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