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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1991592004> ?p ?o ?g. }

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• W1991592004 abstract "MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS–VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled." @default.
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• W1991592004 date "2003-01-01" @default.
• W1991592004 modified "2023-09-25" @default.
• W1991592004 title "High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN∕GaN high electron mobility transistors" @default.
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• W1991592004 doi "https://doi.org/10.1049/el:20030525" @default.
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