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- W1991717059 abstract "The injection current dependent electroluminescence decay time of green and yellow emitting diodes produced by Zn diffusion into VPE-GaP:N, Te and VPE-GaAs0.11P0.89:N, Te, respectively, is compared with the photoluminescence decay time measured in the as-grown layers independence on the excitation intensity. As it is possible to distinguish in this way between the nonradiative recombination at point defect centres and at dislocations the influence of these two types of defects can be investigated. This is confirmed applying this method to LED's prepared by different dicing methods. The degradation behaviour of the samples investigated can be understood in terms of decreasing minority carrier lifetime only in the n-region of the LED caused by increasing dislocation density. Durch Vergleich der Elektrolumineszenz-Abklingzeit grün- bzw. gelbleuchtender Lichtemitterdioden, die durch Zn-Diffusion in VPE-GaP:N, Te bzw. VPE-GaAs0,11P0,89:N, Te hergestellt werden, bei verschiedenen Injektionsströmen mit den Ergebnissen von Photolumineszenz-Abklingmessungen am Ausgangsmaterial bei verschiedenen Anregungsintensitäten kann zwischen der nichtstrahlenden Rekombination an Punktdefekten und an Versetzungen unterschieden werden. Damit wird es möglich, den Einfluß dieser Rekombinationsmechanismen während der Degradation der LED's zu untersuchen. Die Anwendung auf LED's, die mit unterschiedlichen Vereinzelungsverfahren hergestellt wurden, bestätigt die Gültigkeit dieser Methode. Das Degradationsverhalten der untersuchten LED's kann allein unter der Annahme interpretiert werden, daß die Minoritätsträgerlebensdauer im n-Gebiet der LED durch wachsende Versetzungsdichte verringert wird." @default.
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- W1991717059 date "1982-08-16" @default.
- W1991717059 modified "2023-09-30" @default.
- W1991717059 title "Current Dependent Electroluminescence Decay and Degradation Behaviour in Green and Yellow LED's" @default.
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- W1991717059 doi "https://doi.org/10.1002/pssa.2210720231" @default.
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