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• W1991772105 abstract "The aim of our work is to fabricate the silicon nanowire (SiNW) sensor used for gas detection by a novel SU8/SiO2/PMMA trilayer nanoimprint technique instead of electron beam lithography (EBL).The SiNW sensor fabricated in our experiment is based on the silicon on insulator (SOI) substrate which is doped by boron with a dopant concentration of 8 × 1017 cm−3. Two nanowire sensors with different linewidths as well as a thin-film device were fabricated for comparison. The fabricated devices were then used for detecting 250 ppm NO2 and 250 ppm NH3. The results show a promising enhanced sensitivity especially for the narrower device." @default.
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• W1991772105 date "2009-04-01" @default.
• W1991772105 modified "2023-10-14" @default.
• W1991772105 title "Silicon nanowire sensor for gas detection fabricated by nanoimprint on SU8/SiO2/PMMA trilayer" @default.
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• W1991772105 doi "https://doi.org/10.1016/j.mee.2008.12.022" @default.
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