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- W1991833070 abstract "Most papers covering metal-semiconductor ohmic contact theory which have been published up to date consider systems with homogeneous impurity concentration in the semiconductor. However, there are techniques of ohmic contact formation on nondegenerate semiconductor where only a very shallow surface layer is impurity enriched. In this paper a model of such contacts is proposed and a simple approximate analytical expression for the specific resistivity is derived. If the impurity concentration in the surface layer is very high, the contact specific resistivity is essentially proportional to NB−1, NB being the semiconductor substrate impurity concentration. To make a good ohmic contact, it is sufficient that the width of the heavily doped surface layer be equal to the equilibrium contact depletion region width. Any further enlargement of the enriched layer practically does not influence the total sample resistance due to the dominant share of the semiconductor body resistance. Experimental results confirm these conclusions qualitatively." @default.
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- W1991833070 date "1978-09-01" @default.
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- W1991833070 title "Metal-N-type semiconductor ohmic contact with a shallow N+ surface layer" @default.
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- W1991833070 doi "https://doi.org/10.1016/0038-1101(78)90349-0" @default.
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