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- W199196788 abstract "III-nitride semiconductors are the materials of choice for green-to-ultraviolet optoelectronics, and there has been worldwide research into wide bandgap GaN and gallium-rich InGaN alloys in the last two decades. Less effort has been devoted to explore their potential for infrared (IR) wavelengths, where they compete with the well-established arsenide and phosphide technologies. This chapter summarizes the progress and challenges in the various approaches for III-nitride IR technology. We first describe light-emitting diodes based on InN and indium-rich InGaN alloys. Then we introduce the fabrication of IR optoelectronic devices using intra-atomic transitions in the 4f electronic shell of lanthanide ions incorporated in a GaN-based active region. Finally, we summarize nitride-based intersubband technology, where IR transitions occur between confined electronic states in the conduction band of GaN/Al(Ga)N nanostructures, either quantum wells or quantum dots." @default.
- W199196788 created "2016-06-24" @default.
- W199196788 creator A5084101863 @default.
- W199196788 creator A5085609198 @default.
- W199196788 date "2014-01-01" @default.
- W199196788 modified "2023-09-25" @default.
- W199196788 title "Infrared emitters made from III-nitride semiconductors" @default.
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