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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1992008352> ?p ?o ?g. }

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• W1992008352 abstract "The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately for the chemistry used. Two different chemistry approaches are compared: addition of hydrogen chloride to the standard precursors or using methyltrichlorosilane, a molecule that contains silicon, carbon and chlorine. Optical and electrical techniques are used to characterize the layers." @default.
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• W1992008352 date "2012-05-01" @default.
• W1992008352 modified "2023-10-01" @default.
• W1992008352 title "SiC epitaxy growth using chloride-based CVD" @default.
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• W1992008352 doi "https://doi.org/10.1016/j.physb.2011.09.063" @default.
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