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- W1992013128 abstract "In this paper, we investigate for the first time the impact of raised source/drain on the short channel current enhancement of MuGFET devices on super critical strained SSOI (SC-SSOI). Short channel nMOS drive current can be improved up to 15% and even 50% in the case of high tensile 30 nm SSOI substrates. We also show that SC-SSOI has a higher sensitivity to the mobility boost from tensile contact etch stop layers (CESL). Therefore the combination of both mobility boosters is very beneficial for nMOS MuGFET when used with SEG." @default.
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- W1992013128 date "2007-01-01" @default.
- W1992013128 modified "2023-10-16" @default.
- W1992013128 title "Optimization of the MuGFET performance on Super Critical-Strained SOI (SC-SSOI) substrates featuring raised source/drain and dual CESL" @default.
- W1992013128 doi "https://doi.org/10.1109/vtsa.2007.378972" @default.
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