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• W1992016081 abstract "We investigated the air stabilities of threshold voltages (Vth) on gate bias stress in pentacene thin-film transistors (TFTs) with a hydroxyl-free and amorphous fluoropolymer as gate insulators. The 40-nm-thick thin films of spin-coated fluoropolymer had excellent electrical insulating properties, and the pentacene TFTs exhibited negligible current hysteresis, low leakage current, a field-effect mobility of 0.45 cm2/Vs and an on/off current ratio of 3 × 107 when it was operated at −20 V in ambient air. After a gate bias stress of 104 s, a small Vth shift below 1.1 V was obtained despite non-passivation of the pentacene layer. We have discussed that the excellent air stability of Vth was attributed to the insulator surface without hydroxyl groups." @default.
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• W1992016081 date "2008-08-01" @default.
• W1992016081 modified "2023-10-17" @default.
• W1992016081 title "High air stability of threshold voltage on gate bias stress in pentacene TFTs with a hydroxyl-free and amorphous fluoropolymer as gate insulators" @default.
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• W1992016081 doi "https://doi.org/10.1016/j.orgel.2008.02.015" @default.
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