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- W1992017266 abstract "The oriented (002) ZnO films were grown on a- and c-face sapphire by pulsed laser deposition. The X-ray diffraction analysis revealed that the oriented (002) ZnO films were epitaxially grown on the substrate successfully. The sample on a-face sapphire had higher crystal quality. However, the photocatalytic activity for Rhodamine B degradation of ZnO film on c-face sapphire was higher than that on a-face sapphire. The Raman spectrum and XPS analysis suggested that the sample on a-face sapphire had higher concentration of defects. The result of the contact angle measurement revealed that the sample on c-face sapphire had higher surface energy. And the investigation of the surface conductance implied that the higher light conductance was helpful for the photocatalytic activity." @default.
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- W1992017266 date "2014-01-01" @default.
- W1992017266 modified "2023-10-16" @default.
- W1992017266 title "Origin of Difference in Photocatalytic Activity of ZnO (002) Grown on a- and c-Face Sapphire" @default.
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- W1992017266 doi "https://doi.org/10.1155/2014/135725" @default.
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