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- W1992028148 abstract "The feasibility of Schottky diode as selector has been investigated for possible application in bipolar-type resistive random access memory (RRAM) devices. In order to evaluate the feasibility of Schottky diode as selector for bipolar-type RRAM applications, a full device simulation has been performed utilizing a Schottky diode + bipolar-type RRAM structure (1SD-1R). On the other hand, we confirmed its successful operation under experimental results with Ni/TiOx/W Schottky diode + Pt/HfO2/Cu bipolar-type RRAM structure. Furthermore, by applying a lower Set voltage in the 1SD-1R structure device, the Reset current and Reset voltage are found to decrease due to the reduced compliance current. Such dependence provides the possibility of lower power consumption in the 1SD-1R structure device." @default.
- W1992028148 created "2016-06-24" @default.
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- W1992028148 date "2014-03-31" @default.
- W1992028148 modified "2023-09-27" @default.
- W1992028148 title "Feasibility of Schottky diode as selector for bipolar-type resistive random access memory applications" @default.
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- W1992028148 doi "https://doi.org/10.1063/1.4870465" @default.
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