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• W1992034501 abstract "Hard x-ray photoelectron spectroscopy has been used to study the band alignment between atomic layer deposited HfO2 on clean Ge (100) and nitrogen treated Ge (100) surfaces. The position of the valence-band maximum was determined by convolving theoretically calculated density of states from first-principles calculations and comparing with experimental valence-band data. Using Kraut’s method, the valence-band offsets were found to be 3.2±0.1 and 3.3±0.1 eV for the samples grown on clean and N passivated Ge, respectively. The oxide charge measured from capacitance-voltage measurements shows a significant increase between the two samples; however, the small change in the band offset between the two systems strongly indicates negligible contribution of the interface to the conduction/valence-band barrier and the band alignment of the heterojunctions." @default.
• W1992034501 created "2016-06-24" @default.
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• W1992034501 date "2010-12-13" @default.
• W1992034501 modified "2023-09-27" @default.
• W1992034501 title "Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces" @default.
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• W1992034501 doi "https://doi.org/10.1063/1.3524262" @default.
• W1992034501 hasPublicationYear "2010" @default.
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