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- W1992043944 abstract "Abstract The influence of drain voltage VD, gate voltage VG and of the chip geometry on 1 ƒ noise of MOS transistors below saturation in strong inversion is analyzed, with the assumption that the carrier mobility along the channel is non-constant. Taking into consideration the effect of dynamical interactions between the carrier density and mobility it is shown, in part I of this paper, that the frequency spectrum of mean-square fluctuations in conductivity dSσ(ƒ) increases vs VD, in relation to the case when the mobility along the channel μ(y) is assumed as constant. This, in particular, concerns the smaller MOS transistors operating near the region of saturation." @default.
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- W1992043944 date "1989-10-01" @default.
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- W1992043944 title "Influence of dynamical interactions between density and mobility of carriers in the channel on noise of MOS transistors below saturation—II. Implications" @default.
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- W1992043944 doi "https://doi.org/10.1016/0038-1101(89)90071-3" @default.
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